IXBX64N250

IXBX64N250概述

Trans IGBT Chip N-CH 2500V 156A 735000mW 3Pin3+Tab TO-264

You can use this IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


得捷:
IGBT 2500V


艾睿:
You can use this IXBX64N250 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


IXBX64N250数据文档
型号 品牌 下载
IXBX64N250

IXYS Semiconductor

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IXBX75N170

IXYS Semiconductor

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IXBX50N360HV

IXYS Semiconductor

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IXBX25N250

IXYS Semiconductor

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IXBX75N170A

IXYS Semiconductor

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IXBX55N300

IXYS Semiconductor

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