NXP BSS83 晶体管, MOSFET, 开关, N沟道, 50 mA, 10 V, 45 ohm, 10 V, 2 V
MOSFET N-channel enhancement switching transistor Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.
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