IXTN600N04T2

IXTN600N04T2概述

N沟道 40V 600A

N-Channel 40V 600A Tc 940W Tc Chassis Mount SOT-227B


得捷:
MOSFET N-CH 40V 600A SOT227B


立创商城:
N沟道 40V 600A


贸泽:
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET


艾睿:
Create an effective common drain amplifier using this IXTN600N04T2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 940000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes gigamos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.


Chip1Stop:
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B


Verical:
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B


IXTN600N04T2数据文档
型号 品牌 下载
IXTN600N04T2

IXYS Semiconductor

下载
IXTN60N50L2

IXYS Semiconductor

下载
IXTN36N50

IXYS Semiconductor

下载
IXTN90P20P

IXYS Semiconductor

下载
IXTN110N20L2

IXYS Semiconductor

下载
IXTN550N055T2

IXYS Semiconductor

下载
IXTN32P60P

IXYS Semiconductor

下载
IXTN120P20T

IXYS Semiconductor

下载
IXTN79N20

IXYS Semiconductor

下载
IXTN200N10L2

IXYS Semiconductor

下载
IXTN22N100L

IXYS Semiconductor

下载

锐单商城 - 一站式电子元器件采购平台