IXBH42N170

IXBH42N170概述

IXBH 系列 单通道 1700 V 42 A 37 ns ton 双极性 MOS 晶体管 - TO-247

IGBT - 1700 V 80 A 360 W 通孔 TO-247AD


得捷:
IGBT 1700V 80A 360W TO247


艾睿:
This fast-switching IXBH42N170 IGBT transistor from Ixys Corporation will be perfect in your circuit. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 360000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin3+Tab TO-247AD


Verical:
Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin3+Tab TO-247AD


IXBH42N170数据文档
型号 品牌 下载
IXBH42N170

IXYS Semiconductor

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IXBH10N300HV

IXYS Semiconductor

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IXBH5N160G

IXYS Semiconductor

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IXBH20N360HV

IXYS Semiconductor

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IXBH24N170

IXYS Semiconductor

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IXBH16N170

IXYS Semiconductor

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IXBH14N250

IXYS Semiconductor

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IXBH10N170

IXYS Semiconductor

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IXBH32N300

IXYS Semiconductor

下载
IXBH28N170A

IXYS Semiconductor

下载
IXBH2N250

IXYS Semiconductor

下载

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