IGBT 模块 Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 284000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual emitter configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT40GP60JDQ2 | Microsemi 美高森美 | 下载 |
| APT40DC120HJ | Microsemi 美高森美 | 下载 |
| APT40GF120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT40DQ60BG | Microsemi 美高森美 | 下载 |
| APT40DQ120BG | Microsemi 美高森美 | 下载 |
| APT4M120K | Microsemi 美高森美 | 下载 |
| APT4F120K | Microsemi 美高森美 | 下载 |
| APT40DQ60BCTG | Microsemi 美高森美 | 下载 |
| APT45GR65B | Microsemi 美高森美 | 下载 |
| APT44GA60B | Microsemi 美高森美 | 下载 |
| APT43GA90B | Microsemi 美高森美 | 下载 |