BC849CWH6327XTSA1

双极晶体管 - 双极结型晶体管BJT AF TRANSISTOR

- 双极 BJT - 单 NPN 30 V 100 mA 250MHz 250 mW 表面贴装型 PG-SOT323-3

得捷:
TRANS NPN 30V 0.1A SOT323

贸泽:
双极晶体管 - 双极结型晶体管BJT AF TRANSISTOR

艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN BC849CWH6327XTSA1 BJT, developed by Infineon Technologies, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 30V 0.1A 250mW Automotive 3-Pin SOT-323 T/R