BC856A RF

PNP 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 PNP ，

### 双极晶体管，Taiwan Semiconductor

欧时:
Taiwan Semiconductor BC856A RF , PNP 晶体管, 100 mA, Vce=65 V, HFE:125, 3引脚 SOT-23封装

艾睿:
The three terminals of this PNP BC856A RF GP BJT from Taiwan Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Transistor PNP 65V 100mA 250mW SOT23

Verical:
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R