IRLD120PBF

N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

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Dynamic dV/dt rating

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For automatic insertion

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Repetitive avalanche rated

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End stackable

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Logic-level gate drive

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RDS ON Specified at VGS = 4 and 5V

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-55 to 175°C Operating temperature range