RFD3055LE

FAIRCHILD SEMICONDUCTOR  RFD3055LE  晶体管, MOSFET, N沟道, 11 A, 60 V, 107 mohm, 5 V, 3 V

The is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.

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Temperature compensating PSPICE® model

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Peak current vs. pulse width curve

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UIS Rating curve