600V,50A截止型IGBT
Minimize the current at your gate with the IGBT transistor from STMicroelectronics. Its maximum power dissipation is 360000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
型号 | 品牌 | 下载 |
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STGW50H60DF | ST Microelectronics 意法半导体 | 下载 |
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STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
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STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |