FDC6401N

FAIRCHILD SEMICONDUCTOR  FDC6401N  双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV

The is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±12V Gate to source voltage

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3A Continuous drain/output current

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12A Pulsed drain/output current