BDW42

达林顿互补硅功率晶体管 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The , BDW46 and BDW47 are complementary devices.

Features

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High DC Current Gain - hFE = 2500 typ. @ IC = 5.0 Adc.

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Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEOsus = 80 Vdc min. BDW46

VCEOsus = 100 Vdc min. - BDW42/BDW47

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Low Collector Emitter Saturation Voltage

VCEsat = 2.0 Vdc max. @ IC = 5.0 Adc

VCEsat = 3.0 Vdc max. @ IC = 10.0 Adc

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Monolithic Construction with Built-In Base Emitter Shunt resistors

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TO-220AB Compact Package

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Pb-Free Packages are Available