SIHD5N50D-GE3

SIHD5N50D-GE3概述

VISHAY  SIHD5N50D-GE3  晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V

The is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.

.
Low area specific ON-resistance
.
Low input capacitance CISS
.
Reduced capacitive switching losses
.
High body diode ruggedness
.
Avalanche energy rated UIS
.
Simple gate drive circuitry
.
Low figure-of-merit FOM Ron x Qg
.
Fast switching
.
Halogen-free
SIHD5N50D-GE3数据文档
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