BC847C RF

小信号 NPN 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 NPN ，

欧时:
Taiwan Semiconductor BC847C RF , NPN 晶体管, 100 mA, Vce=45 V, HFE:420, 3引脚 SOT-23封装

艾睿:
Implement this NPN BC847C RF GP BJT from Taiwan Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Allied Electronics:
Transistor 200mWSOT-23

Verical:
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R