Trans IGBT Chip N-CH 650V 118A 543000mW 3Pin3+Tab TO-247
Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 650 V. It is made in a single configuration. This device utilizes npt technology. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT45GR65B | Microsemi 美高森美 | 下载 |
| APT40DC120HJ | Microsemi 美高森美 | 下载 |
| APT40GF120JRDQ2 | Microsemi 美高森美 | 下载 |
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| APT40DQ120BG | Microsemi 美高森美 | 下载 |
| APT4M120K | Microsemi 美高森美 | 下载 |
| APT4F120K | Microsemi 美高森美 | 下载 |
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