BF5030WH6327XTSA1

Infineon Si N沟道 MOSFET 四极管 BF5030WH6327XTSA1, 25 mA, Vds=8 V, 4引脚 SOT-343封装

双栅极 MOSFET 四极管

Infineon 双栅极低噪声四极管 MOSFET 射频

得捷:
FET RF 8V 800MHZ SOT343

欧时:
Infineon Si N沟道 MOSFET 四极管 BF5030WH6327XTSA1, 25 mA, Vds=8 V, 4引脚 SOT-343封装

艾睿:
Infineon Technologies offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this BF5030WH6327XTSA1 RF amplifier. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 8V 0.025A 4-Pin SOT-343 T/R

Chip1Stop:
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin3+Tab SOT-343 T/R

TME:
Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT

Verical:
Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin3+Tab SOT-343 T/R

Win Source:
FET RF 8V 800MHZ SOT343