NXP PBHV8540Z 单晶体管 双极, NPN, 400 V, 30 MHz, 700 mW, 500 mA, 200 hFE
The is a 0.5A NPN breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.
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High voltage
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Low collector-emitter saturation voltage VCEsat
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High collector current capability IC and ICM
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High collector current gain hFE at high IC
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AEC-Q101 qualified
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PNP complement is PBHV9040Z
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V8540Z Marking code