双N沟道2.5V指定的PowerTrench MOSFET Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• 4.5 A, 20 V. RDSON= 0.022 Ω @ VGS= 4.5 V
RDSON= 0.028 Ω @ VGS= 2.5 V.
• Low gate charge 16.2nC typical.
• Fast switching speed.
•High performance trench technology for extremely low RDSON.
• Small footprint 38% smaller than a standard SO-8;low profile package 1 mm thick; power handling capability similar to SO-8.
| 型号 | 品牌 | 下载 |
|---|---|---|
| FDR8305N | Fairchild 飞兆/仙童 | 下载 |
| FDR8702H | Fairchild 飞兆/仙童 | 下载 |
| FDR840P | Fairchild 飞兆/仙童 | 下载 |
| FDR844P | Fairchild 飞兆/仙童 | 下载 |
| FDR8308P | Fairchild 飞兆/仙童 | 下载 |
| FDR838P | Fairchild 飞兆/仙童 | 下载 |
| FDR8508P | Fairchild 飞兆/仙童 | 下载 |
| FDR842P | Fairchild 飞兆/仙童 | 下载 |
| FDR8521L | Fairchild 飞兆/仙童 | 下载 |
| FDR836P | Fairchild 飞兆/仙童 | 下载 |
| FDR858P | Fairchild 飞兆/仙童 | 下载 |