Trans IGBT Chip N-CH 600V 100A 329000mW 4Pin SOT-227
The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 329000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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