NXP PMGD290UCEA 双路场效应管, MOSFET, N和P沟道, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
The is a complementary N/P-channel enhancement-mode FET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
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# NXP PMGD290UCEA MOSFET Transistor, N and P Channel, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
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