APTGT50x 系列 600 V 80 A 沟槽 + 场截止 IGBT3 功率 模块 - SP3
This secure and fast infineon IGBT module from is perfect for your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 176000 mW. It is made in a hex configuration. This IGBT driver board has an operating temperature range of -40 °C to 125 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APTGT50X60T3G | Microsemi 美高森美 | 下载 |
| APTGF75DA60D1G | Microsemi 美高森美 | 下载 |
| APTGF50A60T1G | Microsemi 美高森美 | 下载 |
| APTGF75SK60D1G | Microsemi 美高森美 | 下载 |
| APTGF50DA120TG | Microsemi 美高森美 | 下载 |
| APTGF90A60D1G | Microsemi 美高森美 | 下载 |
| APTGF90A60TG | Microsemi 美高森美 | 下载 |
| APTGF90DA60D1G | Microsemi 美高森美 | 下载 |
| APTGT100SK60TG | Microsemi 美高森美 | 下载 |
| APTGF50DH60TG | Microsemi 美高森美 | 下载 |
| APTGF90DA60TG | Microsemi 美高森美 | 下载 |