RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Perfect for amplifying and switching electronic signals, this RF amplifier made from STMicroelectronics is ideal for radio frequency environments. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85035S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |