晶体管, 射频FET, 130 V, 20 A, 389 W, 175 MHz, M174
Amplifying and switching electronic signals fast and reliably can be done with this RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 389000 mW. This component will be shipped in tray format. Its maximum frequency is 230 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.
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