BFP 420 H6327

BFP 420 H6327概述

INFINEON  BFP 420 H6327  晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE

The is a 4.5V NPN Silicon RF Transistor for high gain low noise amplifiers. RF transistor provides the best possible performance and superior flexibility. RF transistor is widely used for new emerging wireless applications, where the system specification is not yet firmly established.

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For oscillators up to 10GHz
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Gold metallization for high reliability
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25GHz Transition frequency
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SIEGET® 25GHz fT - Line
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AEC-Q101 qualified

ESD sensitive device, take proper precaution while handling the device. Due to technical requirements, component may contain dangerous substances.

BFP 420 H6327数据文档
型号 品牌 下载
BFP 420 H6327

Infineon 英飞凌

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BFP 183 E7764

Infineon 英飞凌

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BFP 720ESD H6327

Infineon 英飞凌

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BFP 520 H6327

Infineon 英飞凌

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BFP 182 E7764

Infineon 英飞凌

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BFP 720 H6327

Infineon 英飞凌

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BFP 520F H6327

Infineon 英飞凌

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BFP 183W H6327

Infineon 英飞凌

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BFP 620F H7764

Infineon 英飞凌

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BFP 720F E6327

Infineon 英飞凌

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BFP 540F E6327

Infineon 英飞凌

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