IPD180N10N3 G

INFINEON  IPD180N10N3 G  晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V

Summary of Features:

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Excellent switching performance

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World’s lowest R DSon

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Very low Q g and Q gd

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Excellent gate charge x R DSon product FOM

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RoHS compliant-halogen free

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MSL1 rated 2

Benefits:

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Environmentally friendly

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Increased efficiency

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Highest power density

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Less paralleling required

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Smallest board-space consumption

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Easy-to-design products