IPD80R1K4CEATMA1

晶体管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V

表面贴装型 N 通道 800 V 3.9A（Tc） 63W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 800V 3.9A TO252-3

欧时:
Infineon MOSFET IPD80R1K4CEATMA1

立创商城:
N沟道 800V 3.9A

e络盟:
晶体管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V

艾睿:
As an alternative to traditional transistors, the IPD80R1K4CEATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 63000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos ce technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 800MinV 3.9A 3-Pin TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3

Verical:
Trans MOSFET N-CH 800V 3.9A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 800V 3.9A TO252-3