射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
* Advanced High Performance In--Package Doherty * Designed for Wide Instantaneous Bandwidth Applications * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
得捷:
FET RF 2CH 65V 2.11GHZ
艾睿:
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
安富利:
Trans MOSFET N-CH 65V 4-Pin NI-1230GS T/R
RfMW:
RF Power Transistor,2110 to 2170 MHz, 110 W, Typ Gain in dB is 16.4 @ 2110 MHz, 28 V, LDMOS, SOT1806
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