IDH10G65C6

Sp001620590/Pg-To220-2/650V, 10A

Description:

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit Q c x V F.

Summary of Features:

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The lowest V F: 1.25V

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Best-in-class figure of merit Q c x V F

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No reverse recovery charge

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Temperature independent switching behavior

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High dv/dt ruggedness

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Optimized thermal behavior

Benefits:

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Improved system efficiency over all load conditions

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Increased system power density

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Reduced cooling requirements and increased system reliability

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Enables extremely fast switching

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Easy and effective match with CoolMOS™ 7 families

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Optimal price performance

Target Applications:

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Server

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Telecom

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PC power

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Solar

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Lighting