BFR520

NXP  BFR520  晶体管 双极-射频, NPN, 15 V, 9 GHz, 300 mW, 70 mA, 120 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 70mA 截止频率fTTranstion FrequencyfT| 9Ghz 直流电流增益hFEDC Current GainhFE| 60~250 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 300mW/0.3W Description & Applications| NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cordless. 描述与应用| NPN9 GHz的宽带 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 说明 BFR540是NPN硅平面外延晶体管，用于应用中的RF前端在GHz范围内的宽带应用，如模拟和数字无绳。