BUV22G

ON SEMICONDUCTOR  BUV22G  单晶体管 双极, 通用, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE

The is an NPN Silicon Power Transistor designed for high-speed, high-current and high-power applications.

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High DC current gain

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Very fast switching times

得捷:
TRANS NPN 250V 40A TO204

立创商城:
BUV22G

e络盟:
单晶体管 双极, 通用, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE

艾睿:
The NPN BUV22G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 250000 mW. This component will be shipped in tray format. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

安富利:
Trans GP BJT NPN 250V 40A 3-Pin2+Tab TO-204 Tray

Verical:
Trans GP BJT NPN 250V 40A 250000mW 3-Pin2+Tab TO-204 Tray

Newark:
Bipolar BJT Single Transistor, General Purpose, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE