BCP5616TC

Trans GP BJT NPN 80V 1A 2000mW Automotive 4Pin3+Tab SOT-223 T/R

Features

•IC= 1A Continuous Collector Current

• Low Saturation Voltage VCEsat < 500mV @ 0.5A

• Gain groups 10 and 16

• Epitaxial Planar Die Construction

• Complementary PNP types: BCP51, 52 and 53

立创商城:
BCP5616TC

得捷:
TRANS NPN 80V 1A SOT223-3

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BCP5616TC GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT NPN 80V 1A Automotive 4-Pin3+Tab SOT-223 T/R

儒卓力:
**NPN TRANSISTOR 80V 1A SOT223 **