BFP720FH6327XTSA1

晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 100 mW, 25 mA, 160 hFE

BFP 720F H6327, SP000750412

得捷:
RF TRANS NPN 4.7V 45GHZ 4TSFP

欧时:
Infineon Bipolar RF Transistor

贸泽:
射频RF双极晶体管 RF BIP TRANSISTORS

艾睿:
Trans RF BJT NPN 4V 0.025A 100mW Automotive 4-Pin TSFP T/R

安富利:
The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon SiGe:C heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Chip1Stop:
Trans GP BJT NPN 4V 0.025A 4-Pin TSFP T/R

Verical:
Trans RF BJT NPN 4V 0.025A 100mW Automotive 4-Pin TSFP T/R