BFS483H6327XTSA1

INFINEON  BFS483H6327XTSA1  晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE

射频双极，

欧时:
Infineon BFS483H6327XTSA1 , NPN 射频双极晶体管, 65 mA, Vce=12 V, HFE:70, 8 GHz, 6引脚 SOT-363 SC-88封装

得捷:
RF TRANS 2 NPN 12V 8GHZ SOT363-6

贸泽:
射频RF双极晶体管 RF BIP TRANSISTOR

e络盟:
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE

艾睿:
Are you looking for a component that can handle high power radio frequencies? Infineon Technologies&s; BFS483H6327XTSA1 RF amplifier is your solution. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R

TME:
Transistor: NPN x2; bipolar; RF; 12V; 65mA; 450mW; SOT363

Verical:
Trans RF BJT NPN 12V 0.065A 450mW Automotive 6-Pin SOT-363 T/R

Newark:
# INFINEON  BFS483H6327XTSA1  Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70

Win Source:
TRANS RF NPN 12V 65MA SOT363