STGF30H60DF

STGF30H60DF概述

Trans IGBT Chip N-CH 600V 34A 31000mW 3Pin3+Tab TO-220FP Tube

This IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 31000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

STGF30H60DF数据文档
型号 品牌 下载
STGF30H60DF

ST Microelectronics 意法半导体

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STGF7NB60SL

ST Microelectronics 意法半导体

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STGFW30V60DF

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STGF35HF60W

ST Microelectronics 意法半导体

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STGFW20V60DF

ST Microelectronics 意法半导体

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STGF20H60DF

ST Microelectronics 意法半导体

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STGF20NB60S

ST Microelectronics 意法半导体

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STGFW30V60F

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STGF19NC60HD

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STGFW20H65FB

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STGFW40V60F

ST Microelectronics 意法半导体

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