STGB10NC60K 系列 N 沟道 600 V 10 A 短路 PowerMesh IGBT - D2PAK
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 65000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB10NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NB40LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB41LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB37LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB18N40LZT4 | ST Microelectronics 意法半导体 | 下载 |