AFT18S230-12NR3

射频金属氧化物半导体场效应RF MOSFET晶体管 1805--1880 MHz, 50 W AVG., 28 V

Overview

The 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

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## Features

* High thermal conductivity packaging technology for reduced thermal resistance

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Optimized for Doherty applications

* RoHS compliant

## Features RF Performance Table

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 17.1| 33.3| 7.1| –33.6| –14

1840 MHz| 17.5| 33.3| 7.1| –33.6| –16

1880 MHz| 17.6| 33.8| 6.9| –33.7| –11