MJE200数据手册PDF_MJE200中文资料-锐单商城

MJE200概述

功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low-power, high-gain audio amplifier applications.

Features

• Collector-Emitter Sustaining Voltage - VCEOsus = 25 Vdc Min @ IC = 10 mAdc

• High DC Current Gain - hFE = 70 Min @ IC = 500 mAdc

= 45 Min @ IC = 2.0 Adc

= 10 Min @ IC = 5.0 Adc

• Low Collector-Emitter Saturation Voltage - VCEsat = 0.3 Vdc Max @ IC = 500 mAdc = 0.75 Vdc Max @ IC = 2.0 Adc

• High Current-Gain - Bandwidth Product - fT = 65 MHz Min @ IC = 100 mAdc

• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB

• Pb-Free Packages are Available

MJE200数据文档