VB60100C-E3/4W

双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

TMBS - Trench MOS 势垒肖特基整流器，30A 至 80A，Vishay Semiconductor

Vishay 的 Trench MOS 势垒肖特基 TMBS 整流器系列包含专利 Trench 结构。 与平面肖特基整流器相比，TMBS 整流器可提供多个优势。 工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。 专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。

专利 Trench 结构

提高交流/直流开关模式电源和直流/直流转换器的效率

高功率密度和低正向电压

### 特点

欧时:
Vishay 二极管 VB60100C-E3/4W 肖特基, Io=60A, Vrev=100V, 3引脚 D2PAK TO-263封装

e络盟:
肖特基整流器, 100 V, 60 A, 双共阴极, TO-263AB, 3 引脚, 790 mV

艾睿:
If your circuit needs to adjust from an AC to DC voltage use a Schottky diode VB60100C-E3/4W rectifier from Vishay. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a dual common cathode configuration. This rectifier has a minimum operating temperature of -40 °C and a maximum of 150 °C. Its peak non-repetitive surge current is 320 A, while its maximum continuous forward current is 60 A.