70T651S12BFGI8

静态随机存取存储器 256K X 36 ASYNC DP RAM

* True Dual-Port memory cells which allow simultaneous access of the same memory location * High-speed access * Commercial: 10/12/15ns max. * Industrial: 10/12ns max. * RapidWrite Mode simplifies high-speed consecutive write cycles * Dual chip enables allow for depth expansion without external logic * IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device * Busy and Interrupt Flags * On-chip port arbitration logic * Full on-chip hardware support of semaphore signaling between ports * Fully asynchronous operation from either port * Separate byte controls for multiplexed bus and bus matching compatibility * Sleep Mode Inputs on both ports * Supports JTAG features compliant to IEEE 1149.1 * Single 2.5V ±100mV power supply for core * LVTTL-compatible, selectable 3.3V ±150mV/2.5V ±100mV power supply for I/Os and control signals on each port * Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad Flatpack and 208-ball fine pitch Ball Grid Array. * Industrial temperature range –40°C to +85°C is available for selected speeds * Green parts available