IPD70R1K4CEAUMA1

晶体管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V

表面贴装型 N 通道 700 V 5.4A（Tc） 53W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 700V 5.4A TO252-3

贸泽:
MOSFET CONSUMER

e络盟:
功率场效应管, MOSFET, N沟道, 700 V, 5.4 A, 1.26 ohm, TO-252 DPAK, 表面安装

艾睿:
Trans MOSFET N-CH 700V 5.4A 3-Pin2+Tab DPAK T/R

安富利:
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction SJ principle and pioneered by Infineon Technologies. CoolMOS™CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by stilll meeting highest efficiency standards. The new series provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

TME:
Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3

Verical:
Trans MOSFET N-CH 700V 5.4A 3-Pin2+Tab DPAK T/R