IS62WV12816BLL-55B2I

IS62WV12816BLL-55B2I概述

SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 55ns 48Pin Mini-BGA

DESCRIPTION

TheISSIIS62WV12816ALL/ IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

• High-speed access time: 45ns, 55ns, 70ns

• CMOS low power operation

   – 36 mW typical operating

   – 9 µW typical CMOS standby

• TTL compatible interface levels

• Single power supply

   – 1.65V--2.2V VDD 62WV12816ALL

   – 2.5V--3.6V VDD 62WV12816BLL

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

• Lead-free available

IS62WV12816BLL-55B2I数据文档
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