STMICROELECTRONICS BUL1102EFP 单晶体管 双极, NPN, 450 V, 30 W, 4 A, 20 hFE
The is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BUL1102EFP | ST Microelectronics 意法半导体 | 下载 |
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