DIODE FAST REC 800V 1A DO214AC
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
得捷:
DIODE GEN PURP 800V 1A DO214AC
| 型号 | 品牌 | 下载 |
|---|---|---|
| US1KHE3/61T | Vishay Semiconductor 威世 | 下载 |
| US1K | Multicomp | 下载 |
| US1K-TP | Micro Commercial Components 美微科 | 下载 |
| US1K F2 | Taiwan Semiconductor 台湾半导体 | 下载 |
| US1K-E3/5AT | Vishay Semiconductor 威世 | 下载 |
| US1K R2 | Taiwan Semiconductor 台湾半导体 | 下载 |
| US1KFA | Fairchild 飞兆/仙童 | 下载 |
| US1KHE3_A/H | Vishay Semiconductor 威世 | 下载 |
| US1KHE3_A/I | Vishay Semiconductor 威世 | 下载 |
| US1K-E3/61T | Vishay Semiconductor 威世 | 下载 |
| US1K-13-F | Multicomp | 下载 |