FDG6316P数据手册PDF_FDG6316P中文资料-锐单商城

FDG6316P概述

FAIRCHILD SEMICONDUCTOR FDG6316P 双路场效应管, MOSFET, 双P沟道, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV

The is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch applications.

.: Low gate charge

.: High performance Trench technology for extremely low RDS ON

.: Compact industry standard surface-mount-package

.: ±8V Gate to source voltage

.: -0.7A Continuous drain current

.: -1.8A Pulsed drain current

FDG6316P详细参数

FDG6316P数据文档

型号	品牌	下载
FDG6316P	Fairchild 飞兆/仙童	下载
FDG6323L	Fairchild 飞兆/仙童	下载
FDG6324L	Fairchild 飞兆/仙童	下载
FDG6342L	Fairchild 飞兆/仙童	下载
FDG6303N	Fairchild 飞兆/仙童	下载
FDG6301N_F085	Fairchild 飞兆/仙童	下载
FDG6331L	Fairchild 飞兆/仙童	下载
FDG6332C	Fairchild 飞兆/仙童	下载
FDG6335N	Fairchild 飞兆/仙童	下载
FDG6317NZ	Fairchild 飞兆/仙童	下载
FDG6301N	Fairchild 飞兆/仙童	下载