IXFN82N60P

N 通道功率 MOSFET，IXYS HiperFET™ Polar™ 系列IXYS N 通道功率 MOSFET，具有快速本征二极管 HiPerFET™### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备

N 通道功率 MOSFET，IXYS HiperFET™ Polar™ 系列

IXYS N 通道功率 MOSFET，具有快速本征二极管 HiPerFET™

欧时:
IXYS HiperFET, Polar 系列 Si N沟道 MOSFET IXFN82N60P, 72 A, Vds=600 V, 4引脚 SOT-227B封装

得捷:
MOSFET N-CH 600V 72A SOT-227B

立创商城:
N沟道 600V 72A

艾睿:
Use Ixys Corporation&s;s IXFN82N60P power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1040000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 600V 72A 4-Pin SOT-227B

Verical:
Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B

Newark:
# IXYS SEMICONDUCTOR  IXFN82N60P  Bipolar BJT Single Transistor, N Channel, 72 A, 600 V, 0.075 ohm, 10 V, 5 V

Win Source:
MOSFET N-CH 600V 72A SOT-227B