1兆位,低电压,页面可擦除串行闪存字节变性和25兆赫的SPI总线接口 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
Description
The M45PE10 is a 1 Mbit 128 Kb x 8 bit Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.
Features
■ SPI bus compatible serial interface
■ 50 MHz clock rate maximum
■ 2.7 V to 3.6 V single supply voltage
■ 1 Mbit of Page-Erasable Flash memory
■ Page size: 256 bytes
– Page Write in 11ms typical
– Page Program in 0.8 ms typical
– Page Erase in 10 ms typical
■ Sector Erase 512 Kbit
■ Hardware Write protection of the bottom sector 64 Kbytes
■ Electronic signature
– JEDEC standard two-byte signature 4011h
■ Deep Power-down mode 1 µA typical
■ More than 100 000 Write cycles
■ More than 20 years’ data retention
■ Packages
– ECOPACK® RoHS compliant
型号 | 品牌 | 下载 |
---|---|---|
M45PE10-VMN6T | ST Microelectronics 意法半导体 | 下载 |
M45PE10S-VMN6P | Micron 镁光 | 下载 |
M45PE20-VMN6TP | Micron 镁光 | 下载 |
M45PE40-VMW6G | Micron 镁光 | 下载 |
M45PE40-VMW6TG | Micron 镁光 | 下载 |
M45PE20-VMP6TG | Micron 镁光 | 下载 |
M45PE40-VMN6P | Micron 镁光 | 下载 |
M45PE80-VMW6G | Micron 镁光 | 下载 |
M45PE16-VMP6G | Micron 镁光 | 下载 |
M45PE80-VMN6P | Micron 镁光 | 下载 |
M45PE10-VMN6P | Micron 镁光 | 下载 |