Trans IGBT Chip N-CH 600V 60A 220000mW 3Pin3+Tab TO-247
IGBT - 600 V 60 A 220 W 通孔 TO-247AD
得捷:
IGBT 600V 60A 220W TO247
艾睿:
This IXGH30N60C3D1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 220000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Verical:
Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin3+Tab TO-247
Win Source:
IGBT 600V 60A 220W TO247
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGH30N60C3D1 | IXYS Semiconductor | 下载 |
| IXGH10N100AU1 | IXYS Semiconductor | 下载 |
| IXGH24N60B | IXYS Semiconductor | 下载 |
| IXGH30N60BD1 | IXYS Semiconductor | 下载 |
| IXGH24N60C | IXYS Semiconductor | 下载 |
| IXGH32N60C | IXYS Semiconductor | 下载 |
| IXGH32N60CD1 | IXYS Semiconductor | 下载 |
| IXGH50N60B | IXYS Semiconductor | 下载 |
| IXGH32N60B | IXYS Semiconductor | 下载 |
| IXGH24N60A | IXYS Semiconductor | 下载 |
| IXGH32N60BU1 | IXYS Semiconductor | 下载 |