BFG540W/XR

BFG540W/XR概述

NPN 9 GHz宽带晶体管 NPN 9 GHz wideband transistor

DESCRIPTION

NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones CT2, CT3, PCN, DECT, etc., radar detectors, pagers, satellite television tuners SATV, MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

BFG540W/XR数据文档
型号 品牌 下载
BFG540W/XR

NXP 恩智浦

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BFG520,235

NXP 恩智浦

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BFG540W,115

NXP 恩智浦

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BFG520/X,235

NXP 恩智浦

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BFG520/X,215

NXP 恩智浦

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BFG540/XR,215

NXP 恩智浦

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BFG520/XR,215

NXP 恩智浦

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BFG520/XR,235

NXP 恩智浦

下载
BFG540W/XR,135

NXP 恩智浦

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BFG540,215

NXP 恩智浦

下载
BFG520W,115

NXP 恩智浦

下载

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