在塑料包装射频功率晶体管LDMOS增强技术 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Use this specially engineered RF amplifier from STMicroelectronics as a switching device in your electronic circuit design. Its maximum power dissipation is 79000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
得捷:
TRANSISTOR RF POWER N-CH 80V 9A
艾睿:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead Tube
Chip1Stop:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead
Verical:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead Tube
DeviceMart:
TRANSISTOR RF POWER N-CH 80V 9A
| 型号 | 品牌 | 下载 |
|---|---|---|
| LET9045S | ST Microelectronics 意法半导体 | 下载 |
| LET9045F | ST Microelectronics 意法半导体 | 下载 |
| LET9060F | ST Microelectronics 意法半导体 | 下载 |
| LET9045 | ST Microelectronics 意法半导体 | 下载 |
| LET9180 | ST Microelectronics 意法半导体 | 下载 |
| LET9060TR | ST Microelectronics 意法半导体 | 下载 |
| LET9060STR | ST Microelectronics 意法半导体 | 下载 |
| LET9060S | ST Microelectronics 意法半导体 | 下载 |
| LET9070CB | ST Microelectronics 意法半导体 | 下载 |
| LET9060C | ST Microelectronics 意法半导体 | 下载 |
| LET9150 | ST Microelectronics 意法半导体 | 下载 |