IXFN420N10T

IXFN420N10T概述

N沟道 100V 420A

底座安装 N 通道 100 V 420A(Tc) 1070W(Tc) SOT-227B


立创商城:
N沟道 100V 420A


得捷:
MOSFET N-CH 100V 420A SOT227B


欧时:
MOSFET 420A 100V SOT227


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFN420N10T power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1070000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.


TME:
Module; single transistor; Uds:100V; Id:420A; SOT227B; 1.07kW


Verical:
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B


IXFN420N10T数据文档
型号 品牌 下载
IXFN420N10T

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IXFN100N10S2

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IXFN100N10S3

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IXFN48N55

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IXFN150N15

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IXFN48N50U3

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IXFN48N50U2

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IXFN150N10

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IXFN44N50U3

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IXFN44N50U2

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IXFN200N07

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